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Critical Technology

Compound & Power Semiconductors

The capacity to develop and produce compound, wide-bandgap and power semiconductors, the device families that carry power electronics, radio frequency and extreme environments. One of the capabilities of Semiconductors & Advanced Computing.

International families
20k2015 to 2024
Leading country
Japan2.4× the next
All families
44khome filings included
Over five years
Rising2020 to 2024 against the five before

Year by year

Patent families by country of origin and the year of the earliest filing, 2000 to 2025; 2025 is a part year, still filling in. International families are those for which protection was sought beyond one country.

Volume

International patent families in the capability, by the year of the earliest filing.

Source: Global Institute for National Capability (GINC), 2026. Underlying patents from 107 patent offices, IFI CLAIMS and Google

Share by country

Each country's share of the year's international families, in per cent: the capability's five largest countries of origin, 2015 to 2024, and the rest of the world.

Source: Global Institute for National Capability (GINC), 2026. Underlying patents from 107 patent offices, IFI CLAIMS and Google

Country leaderboard

International patent families, 2015 to 2024, by country of origin. Growth compares the latest five full years with the five before.

Ten largest

Japan

Taiwan

United States

China

South Korea

Germany

Austria

France

Switzerland

Netherlands

7,085

3,005

2,833

2,353

1,705

970

393

325

255

188

2000 to 2025
1Japan7,08535.5%1.0×
9,912
2Taiwan3,00515.0%1.6×
4,183
3United States2,83314.2%1.0×
5,006
4China2,35311.8%1.9×
18,634
5South Korea1,7058.5%1.7×
2,855
6Germany9704.9%0.7×
1,169
7Austria3932.0%1.0×
436
8France3251.6%1.1×
359
9Switzerland2551.3%2.7×
274
10Netherlands1880.9%2.0×
192
11United Kingdom1400.7%1.3×
194
12Italy1360.7%1.4×
157
13Singapore1190.6%1.6×
178
14Belgium840.4%0.7×
85
15Canada760.4%3.8×
98
16Sweden580.3%1.1×
60
17Cayman Islands460.2%0.3×
193
18Israel260.1%1.4×
40
19Ireland220.1%0.8×
29
20Finland190.1%0.3×
20
21Hong Kong190.1%0.7×
22
22Saudi Arabia190.1%0.3×
22
23Australia180.1%2.0×
18
24Spain110.1%4.5×
11
25India100.1%1.0×
23
26Denmark70.0%0.4×
7
27Poland70.0%2.5×
18
28Russia60.0%1.0×
40
29Norway60.0%0.0×
6
30Malaysia40.0%0.0×
8
31Türkiye20.0%1.0×
16
32Brazil10.0%–
1
33New Zealand10.0%0.0×
2
34Luxembourg10.0%0.0×
1
35Czechia00.0%–
3
36Mexico00.0%–
2

Applicants

The largest applicants by international patent families, 2015 to 2024: across the world, then within each of the five countries with the most families in Compound & Power Semiconductors. Names are as held in the source and are not consolidated across subsidiaries.

Global

19,969 international families

TAIWAN SEMICONDUCTOR MFG CO LTD · Taiwan

TOSHIBA KK · Japan

SAMSUNG ELECTRONICS CO LTD · South Korea

TOSHIBA CORP · Japan

FUJI ELECTRIC CO LTD · Japan

MITSUBISHI ELECTRIC CORP · Japan

1,800

1,058

1,012

1,008

981

736

Japan

7,085 international families

TOSHIBA KK

TOSHIBA CORP

FUJI ELECTRIC CO LTD

MITSUBISHI ELECTRIC CORP

TOSHIBA ELECTRONIC DEVICES & STORAGE CORP

ROHM CO LTD

1,058

1,008

981

726

652

526

Taiwan

3,005 international families

TAIWAN SEMICONDUCTOR MFG CO LTD

TAIWAN SEMICONDUCTOR MFG

UNITED MICROELECTRONICS CORP

NUVOTON TECHNOLOGY CORP

GLOBALWAFERS CO LTD

HON HAI PREC IND CO LTD

1,798

545

291

105

66

65

United States

2,833 international families

INTEL CORP

SEMICONDUCTOR COMPONENTS IND LLC

WOLFSPEED INC

TEXAS INSTRUMENTS INC

GLOBALFOUNDRIES US INC

IBM

575

228

200

176

131

103

China

2,353 international families

HUAWEI TECH CO LTD

CSMC TECHNOLOGIES FAB2 CO LTD

ENKRIS SEMICONDUCTOR INC

CSMC TECHNOLOGY CORP

SEMICONDUCTOR MFG INT SHANGHAI CORP

SEMICONDUCTOR MFG INT BEIJING CORP

169

143

134

129

124

105

South Korea

1,705 international families

SAMSUNG ELECTRONICS CO LTD

DB HITEK CO LTD

HYUNDAI MOTOR CO LTD

SK HYNIX INC

SENIC INC

MAGNACHIP SEMICONDUCTOR LTD

1,009

85

49

39

36

32

Similar capabilities

The nine capabilities that share the most international patent families with Compound & Power Semiconductors, 2015 to 2024: the families counted in both as a share of those counted in either. Each card shows its five largest countries.

Critical Technology

Advanced Semiconductor Fabrication

12.1% shared · 17,261 families in both

Japan

United States

South Korea

Taiwan

China

44,951

23,299

22,064

19,873

15,776

Critical Technology

Nanomaterials & Metamaterials

4.5% shared · 2,008 families in both

United States

South Korea

China

Japan

Taiwan

6,721

3,882

3,587

3,507

2,242

Critical Technology

Advanced Packaging & Heterogeneous Integration

3.6% shared · 3,648 families in both

Japan

South Korea

United States

Taiwan

China

24,716

15,416

12,420

11,991

9,796

Strategic Infrastructure

Production Systems

2.8% shared · 10,393 families in both

Japan

United States

China

Germany

South Korea

106,439

60,107

40,792

37,205

32,878

Critical Technology

Semiconductor Equipment & Materials

2.7% shared · 3,097 families in both

Japan

United States

South Korea

China

Taiwan

37,853

15,529

13,584

8,665

6,232

Critical Technology

Semiconductor Design & EDA

1.2% shared · 340 families in both

United States

Taiwan

China

South Korea

Japan

2,117

1,739

1,459

1,379

1,123

Critical Technology

Quantum Computing

0.8% shared · 213 families in both

United States

Japan

China

Germany

France

2,335

791

484

336

322

Critical Technology

Functional Materials & Coatings

0.7% shared · 361 families in both

Japan

United States

China

South Korea

Germany

11,491

5,498

3,423

3,088

2,261

Critical Technology

Next-Generation Solar & Renewables

0.4% shared · 201 families in both

China

Japan

United States

Germany

Denmark

5,522

4,562

3,649

3,261

2,913

Crosswalk

How Compound & Power Semiconductors is matched to the patent classifications. The entries below were chosen for it; each stands for itself and everything beneath it in the scheme, 83 Cooperative entries in all. A patent family counts when any of its codes, in either scheme and at any office, falls under one of them. Codes since retired are placed under the entries that replaced them.

EntryTitle in the schemeWhy it is chosenCPC codesIPC codesDocuments
H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAsGroup III-V semiconductor bodies, e.g. gallium nitride, gallium arsenide10789,298
H10D62/8325Silicon carbideSilicon carbide device bodies2none52,985
H10D62/8303DiamondDiamond device bodies2none6,671
H10D62/82HeterojunctionsHeterojunction device bodies6456,761
H10D30/47FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]High-electron-mobility transistors25286,005
H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]Insulated-gate bipolar transistors283121,378
H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETsPower DMOS transistors153118,044
H10D8/60Schottky-barrier diodes Schottky diodes4228,558
H10D18/00ThyristorsThyristors281138,432
C30B29/36CarbidesSilicon carbide and other carbide crystals1118,999
C30B29/38NitridesNitride crystals1113,356
C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or BiGroup III-V compound crystals5336,093

CPC and IPC codes are the codes in use on patent documents, at any office, that fall under the entry. Documents is the larger of the two schemes' counts of documents carrying one of them. An entry with no IPC codes can be told apart only in the Cooperative scheme.

The Cooperative codes in use that count towards Compound & Power Semiconductors: 127 codes on 639,951 documents. The full crosswalk is in the cpc-to-capability.csv download.

CodeTitleUnder entryHow placedDocuments
H10D62/8503Nitride Group III-V materials, e.g. AlN or GaNH10D62/85In the scheme47,731
H10D62/8325Silicon carbideH10D62/8325In the scheme45,174
H10D30/668Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistorsH10D30/64In the scheme40,887
H10D62/822Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctionsH10D62/82In the scheme32,049
H10D12/481Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTsH10D12/00In the scheme23,796
H10D30/66Vertical DMOS [VDMOS] FETsH10D30/64In the scheme22,852
H10D8/60Schottky-barrier diodes H10D8/60In the scheme22,429
H10D30/475High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTsH10D30/47In the scheme21,916
C30B29/36CarbidesC30B29/36In the scheme18,225
H10D30/665Vertical DMOS [VDMOS] FETs having edge termination structuresH10D30/64In the scheme18,162
H10D12/031Manufacture or treatment of IGBTsH10D12/00In the scheme17,470
H10D30/4755High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTsH10D30/47In the scheme16,532
H10D62/824Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctionsH10D62/82In the scheme16,351
H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAsH10D62/85In the scheme15,418
H10D30/65Lateral dmos [ldmos] fetsH10D30/64In the scheme15,234
H10D12/441Vertical IGBTsH10D12/00In the scheme15,208
H10D12/038Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTsH10D12/00In the scheme15,162
C30B29/403AIII-nitridesC30B29/40In the scheme13,087
H10D30/47FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]H10D30/47In the scheme12,644
C30B29/406Gallium nitrideC30B29/40In the scheme12,268
H01L29/2003Retired codeH10D62/85Retired, by concordance9,829
H10D12/411Insulated-gate bipolar transistors [IGBT]H10D12/00In the scheme8,189
H01L29/1608Retired codeH10D62/8325Retired, by concordance7,811
H10D30/4732High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor materialH10D30/47In the scheme7,488
C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or BiC30B29/40In the scheme7,465
H10D62/82HeterojunctionsH10D62/82In the scheme7,323
H10D12/032Manufacture or treatment of IGBTs of vertical IGBTsH10D12/00In the scheme7,038
H10D62/8303DiamondH10D62/8303In the scheme6,119
H10D62/854Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopantsH10D62/85In the scheme5,274
H10D12/211Gated diodesH10D12/00In the scheme5,112
C30B29/38NitridesC30B29/38In the scheme5,012
H10D62/852Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbPH10D62/85In the scheme4,430
H10D18/00ThyristorsH10D18/00In the scheme4,336
H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]H10D12/00In the scheme4,065
H01L29/205Retired codeH10D62/85Retired, by concordance4,009
H01L29/7786Retired codeH10D30/47Retired, by concordance3,887
H10D12/01Manufacture or treatmentH10D12/00In the scheme3,771
H01L29/7397Retired codeH10D12/00Retired, by concordance3,512
H10D30/657Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistorsH10D30/64In the scheme3,456
H10D30/663Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOSH10D30/64In the scheme3,237
H01L29/872Retired codeH10D8/60Retired, by concordance3,037
H10D30/472High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMTH10D30/47In the scheme3,004
H01L29/7787Retired codeH10D30/47Retired, by concordance2,978
H10D30/481FETs having two-dimensional material channels, e.g. transition metal dichalcogenide [TMD] FETsH10D30/47In the scheme2,916
H10D30/658Lateral DMOS [LDMOS] FETs having trench gate electrodesH10D30/64In the scheme2,896
C30B29/42Gallium arsenideC30B29/40In the scheme2,871
H10D12/461Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regionsH10D12/00In the scheme2,841
H10D8/605Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]H10D8/60In the scheme2,750
H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETsH10D30/64In the scheme2,606
H10D30/662Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift regionH10D30/64In the scheme2,601
H01L29/778Retired codeH10D30/47Retired, by concordance2,312
H10D30/477Vertical HEMTs or vertical HHMTsH10D30/47In the scheme2,283
H10D18/80Bidirectional devices, e.g. triacs H10D18/00In the scheme2,246
H10D12/021Manufacture or treatment of gated diodes, e.g. field-controlled diodes [FCD]H10D12/00In the scheme2,242
H10D18/251Lateral thyristorsH10D18/00In the scheme2,228
H10D30/655Lateral DMOS [LDMOS] FETs having edge termination structuresH10D30/64In the scheme2,210
H10D18/60Gate-turn-off devices H10D18/00In the scheme2,117
H10D30/669Vertical DMOS [VDMOS] FETs having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cellsH10D30/64In the scheme1,977
H10D18/655Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structuresH10D18/00In the scheme1,930
H10D30/471High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]H10D30/47In the scheme1,821
H10D18/40Thyristors with turn-on by field effect H10D18/00In the scheme1,776
H10D12/421Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTsH10D12/00In the scheme1,754
H10D30/473High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMTH10D30/47In the scheme1,744
H01L29/7395Retired codeH10D12/00Retired, by concordance1,723
H10D12/035Etching a recess in the emitter region H10D12/00In the scheme1,710
H10D12/491Vertical IGBTs having both emitter contacts and collector contacts in the same substrate sideH10D12/00In the scheme1,594
H10D18/01Manufacture or treatmentH10D18/00In the scheme1,565
H10D30/478High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor bodyH10D30/47In the scheme1,367
H01L29/20Retired codeH10D62/85Retired, by concordance1,300
H10D30/4738High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having multiple donor layersH10D30/47In the scheme1,299
H01L29/7393Retired codeH10D12/00Retired, by concordance1,277
H10D12/212Gated diodes having PN junction gates, e.g. field controlled diodesH10D12/00In the scheme1,132
H10D18/221Thyristors having amplifying gate structures, e.g. cascade configurationsH10D18/00In the scheme1,044
H10D30/4735High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having delta-doped or planar-doped donor layersH10D30/47In the scheme999
H01L29/7783Retired codeH10D30/47Retired, by concordance901
H10D12/415Insulated-gate bipolar transistors [IGBT] having edge termination structuresH10D12/00In the scheme877
H10D30/667Vertical DMOS [VDMOS] FETs having substrates comprising insulating layers, e.g. SOI-VDMOS transistorsH10D30/64In the scheme819
H01L29/207Retired codeH10D62/85Retired, by concordance810
H10D12/417Insulated-gate bipolar transistors [IGBT] having a drift region having a doping concentration that is higher at the collector side relative to other parts of the drift regionH10D12/00In the scheme775
H10D18/211Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firingH10D18/00In the scheme657
H01L29/7391Retired codeH10D12/00Retired, by concordance656
H10D12/418Insulated-gate bipolar transistors [IGBT] having a drift region having a doping concentration that is higher at the emitter side relative to other parts of the drift regionH10D12/00In the scheme603
H10D30/664Inverted VDMOS transistors, i.e. source-down VDMOS transistorsH10D30/64In the scheme593
H01L29/1602Retired codeH10D62/8303Retired, by concordance552
H10D62/826Heterojunctions comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctionsH10D62/82In the scheme501
H01L29/201Retired codeH10D62/85Retired, by concordance459
H10D18/031Manufacture or treatment of lateral or planar thyristorsH10D18/00In the scheme442
H10D18/65Gate-turn-off devices  with turn-off by field effect H10D18/00In the scheme414
H01L29/7788Retired codeH10D30/47Retired, by concordance411
C30B29/44Gallium phosphideC30B29/40In the scheme402
H10D62/8271Heterojunctions comprising only oxide semiconductor materials heterojunctions, e.g. IGZO/IZOH10D62/82In the scheme387
H01L29/8725Retired codeH10D8/60Retired, by concordance342
H10D18/021Manufacture or treatment of bidirectional devices, e.g. triacsH10D18/00In the scheme330
H01L29/7396Retired codeH10D12/00Retired, by concordance297
H01L29/7781Retired codeH10D30/47Retired, by concordance293
H10D18/241Asymmetrical thyristorsH10D18/00In the scheme268
H10D30/659Lateral DMOS [LDMOS] FETs having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cellsH10D30/64In the scheme265
H01L29/74Retired codeH10D18/00Retired, by concordance261
H10D30/645Bidirectional devicesH10D30/64In the scheme249
H01L29/739Retired codeH10D12/00Retired, by concordance246
H01L29/7782Retired codeH10D30/47Retired, by concordance236
H01L29/747Retired codeH10D18/00Retired, by concordance234
H01L29/7436Retired codeH10D18/00Retired, by concordance226
H10D30/476High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having gate trenches interrupting the 2D charge carrier gas channels, e.g. hybrid MOS-HEMTsH10D30/47In the scheme194
H10D30/485Vertical FETs having two-dimensional material channelsH10D30/47In the scheme184
H01L29/7785Retired codeH10D30/47Retired, by concordance164
H10D62/8281Heterojunctions comprising only transition metal dichalcogenide materials heterojunctions, e.g. MoS2/WSe2H10D62/82In the scheme150
H01L29/7394Retired codeH10D12/00Retired, by concordance149
H01L29/7784Retired codeH10D30/47Retired, by concordance148
H10D30/474High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having multiple parallel 2D charge carrier gas channelsH10D30/47In the scheme144
H01L29/7789Retired codeH10D30/47Retired, by concordance140
H01L29/7408Retired codeH10D18/00Retired, by concordance138
H10D12/416Bidirectional devices, e.g. trench-gate IGBTs having additional gates at the anode sideH10D12/00In the scheme112
H01L29/7412Retired codeH10D18/00Retired, by concordance99
H01L29/749Retired codeH10D18/00Retired, by concordance99
H01L29/7455Retired codeH10D18/00Retired, by concordance98
H01L29/7424Retired codeH10D18/00Retired, by concordance72
H01L29/744Retired codeH10D18/00Retired, by concordance72
H01L29/7416Retired codeH10D18/00Retired, by concordance71
H01L29/742Retired codeH10D18/00Retired, by concordance63
H01L29/7404Retired codeH10D18/00Retired, by concordance45
H01L29/745Retired codeH10D18/00Retired, by concordance42
H01L29/7398Retired codeH10D12/00Retired, by concordance40
H01L29/2006Retired codeH10D62/85Retired, by concordance38
H01L29/7428Retired codeH10D18/00Retired, by concordance31
H01L29/7392Retired codeH10D12/00Retired, by concordance27
H01L29/7432Retired codeH10D18/00Retired, by concordance17
Match: Direct
The capability is itself a technology or a kind of physical system, and the classification names it. Silicon carbide and diamond devices are separable only in CPC; older H01L entries are absent from the scheme, so documents carrying only H01L codes are not matched. The crosswalk is a first pass that nobody has reviewed.

Other capabilities in Semiconductors & Advanced Computing